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Ion Implantation and Synthesis of Materials - Michael Nastasi|James W. Mayer
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Michael Nastasi|James W. Mayer:

Ion Implantation and Synthesis of Materials - Paperback

2010, ISBN: 3642062598

[EAN: 9783642062599], Neubuch, [PU: Springer Berlin Heidelberg], DIFFUSION DOPING IMPLANTEDSHALLOWJUNCTIONS IONIMPLANTATION IONRANGES ION-MODIFIEDMATERIALS SLICINGSILICON CRYSTAL DISTRIBU… More...

NEW BOOK. Shipping costs:Versandkostenfrei. (EUR 0.00) moluna, Greven, Germany [73551232] [Rating: 5 (von 5)]
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Ion Implantation and Synthesis of Materials - Mayer, James W.; Nastasi, Michael
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Mayer, James W.; Nastasi, Michael:

Ion Implantation and Synthesis of Materials - Paperback

2010, ISBN: 3642062598

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Softcover reprint of hardcover 1st ed. 2006 Kartoniert / Broschiert Materialwissenschaft / Aggregatzustände, Teilchen- und Hochenergiephysik, Physikalische Chemie, Elektronische Geräte … More...

Shipping costs:Versandkostenfrei innerhalb der BRD. (EUR 0.00) MARZIES.de Buch- und Medienhandel, 14621 Schönwalde-Glien
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Ion Implantation and Synthesis of Materials - Michael Nastasi James W. Mayer
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Michael Nastasi James W. Mayer:
Ion Implantation and Synthesis of Materials - First edition

2010

ISBN: 9783642062599

Paperback

[ED: Kartoniert / Broschiert], [PU: Springer Berlin Heidelberg], Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Presents the basics and c… More...

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Ion Implantation and Synthesis of Materials - Nastasi, Michael
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Nastasi, Michael:
Ion Implantation and Synthesis of Materials - Paperback

2010, ISBN: 9783642062599

Mitwirkende: Mayer, James W. Springer, Taschenbuch, Auflage: Softcover reprint of hardcover 1st ed. 2006, 280 Seiten, Publiziert: 2010-02-12T00:00:01Z, Produktgruppe: Buch, Hersteller-Nr.… More...

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Ion Implantation and Synthesis of Materials - James W. Mayer/ Michael Nastasi
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James W. Mayer/ Michael Nastasi:
Ion Implantation and Synthesis of Materials - Paperback

2006, ISBN: 9783642062599

Ion Implantation and Synthesis of Materials ab 129.99 € als Taschenbuch: Softcover reprint of hardcover 1st ed. 2006. Aus dem Bereich: Bücher, Wissenschaft, Physik, Medien > Bücher nein B… More...

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Bibliographic data of the best matching book

Details of the book
Ion Implantation and Synthesis of Materials

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Details of the book - Ion Implantation and Synthesis of Materials


EAN (ISBN-13): 9783642062599
ISBN (ISBN-10): 3642062598
Hardcover
Paperback
Publishing year: 2010
Publisher: Springer Berlin Heidelberg
280 Pages
Weight: 0,427 kg
Language: eng/Englisch

Book in our database since 2011-05-17T23:41:30+01:00 (London)
Detail page last modified on 2023-01-25T16:23:33+00:00 (London)
ISBN/EAN: 9783642062599

ISBN - alternate spelling:
3-642-06259-8, 978-3-642-06259-9
Alternate spelling and related search-keywords:
Book author: michael nastasi, michael mayer, michael may, michael nast, james michael
Book title: synthesis, ion


Information from Publisher

Author: Michael Nastasi; James W. Mayer
Title: Ion Implantation and Synthesis of Materials
Publisher: Springer; Springer Berlin
263 Pages
Publishing year: 2010-02-12
Berlin; Heidelberg; DE
Printed / Made in
Language: English
106,99 € (DE)
109,99 € (AT)
118,00 CHF (CH)
POD
XIV, 263 p. 131 illus.

BC; Hardcover, Softcover / Physik, Astronomie/Atomphysik, Kernphysik; Teilchen- und Hochenergiephysik; Verstehen; Diffusion; Doping; Implanted shallow junctions; Ion implantation; Ion ranges; Ion-modified materials; Slicing silicon; crystal; distribution; materials properties; materials science; Accelerator Physics; Condensed Matter Physics; Optical Materials; Characterization and Analytical Technique; Physical Chemistry; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Technische Anwendung von elektronischen, magnetischen, optischen Materialien; Werkstoffprüfung; Physikalische Chemie; BB

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Presents the basics and current state of the art in the field of ion implantation-based materials physics Includes supplementary material: sn.pub/extras

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