Polycrystalline Semiconductors II: Proceedings of the Second International Conference Schwäbisch Hall, Fed. Rep. of Germany, July 30–August 3,1990 (Springer Proceedings in Physi - hardcover

EAN (ISBN-13): 9783540536130
ISBN (ISBN-10): 3540536132
Hardcover
Publishing year: 1990
Publisher: Springer

Book in our database since 2007-12-10T23:29:28+00:00 (London)
Detail page last modified on 2022-07-05T08:41:36+01:00 (London)
ISBN/EAN: 9783540536130

ISBN - alternate spelling:
3-540-53613-2, 978-3-540-53613-0
Alternate spelling and related search-keywords:
Book author: horst werner, strunk jürgen
Book title: schwäbisch hall, proceedings the international conference the physics semiconductors

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Information from Publisher

Author: Jürgen H. Werner; Horst P. Strunk
Title: Springer Proceedings in Physics; Polycrystalline Semiconductors II - Proceedings of the Second International Conference Schwäbisch Hall, Fed. Rep. of Germany, July 30–August 3,1990
Publisher: Springer; Springer Berlin
549 Pages
Publishing year: 1991-12-16
Berlin; Heidelberg; DE
Weight: 0,975 kg
Language: English
85,55 € (DE)
87,95 € (AT)
106,60 CHF (CH)
Not available, publisher indicates OP

BB; Book; Hardcover, Softcover / Technik/Maschinenbau, Fertigungstechnik; Materialwissenschaft; Verstehen; dislocations; misfitting interfaces; semiconductor thin films; Grain boundaries in semiconductors; polycrystalline semiconductors; C; Surfaces and Interfaces, Thin Films; Physics and Astronomy; Electronics and Microelectronics, Instrumentation; Physical Chemistry; Oberflächenchemie und Adsorption; Elektronik; Physikalische Chemie; BC; EA

I Dislocations: Structure.- Dislocations in Semiconductors.- TEM Investigations of Dislocations in Annealed Multicrystalline Silicon.- The Dissociation of Dislocations in SixGe1—x Alloys.- II Dislocations: Optical and Electronic Properties.- Dislocation-Related Excitons in Semiconductors.- DC Conduction Along Dislocations in Semiconductors.- Dislocation Luminescence in Zinc Selenide.- Origin of the D-Band Photoluminescence in Silicon.- Electronic States on Dislocations in Semiconductors and the Optical Spectrum Peculiarities.- III Beam Induced Characterization.- Characterization of Grain Boundaries by the Electron Beam Induced Current Method.- EBIC Contrast of Grain Boundaries in Polycrystalline Silicon Solar Cells.- The Electrical Activity of Dislocations in the Presence of Transition Metal Contaminants.- In-Plane Investigation of Grain Boundary Recombination Strength in Silicon Bicrystals.- EBIC Investigations of Grain Boundaries in Polycrystalline Silicon.- Bright EBIC Contrast of Crystal Defects in Silicon.- Structural and Electrical Characterization of Hot Pressed Grain Boundaries in Silicon by EBIC and TEM.- Photoacoustic Microscopy of Semiconductor Structures Using Piezoelectric Detection.- IV Grain Boundaries: Theory.- Grain Boundaries in Elemental and Compound Semiconductors.- The Atomic and Electronic Structures of Grain Boundaries in Silicon-Carbide and Silicon.- Broken Bond Centers Within Grain Boundaries and Dislocations in Silicon and Germanium.- Theoretical Studies of Grain Boundary Electronic Properties of Silicon: Effect of Impurity Segregation.- Classification of Grain Boundary Activity in Semiconductors.- V Grain Boundaries in Silicon: Structure, Chemistry and Transport.- Multicrystalline Silicon and Highly Efficient Solar Cells.- Microstructure and Electrical Properties of Grain Boundaries in Elemental Semiconductors.- Surface and Internal Surface Effects in Polycrystalline Semiconductors.- Interactions of Grain Boundaries, Dislocations and Dissolved Impurities in Multicrystalline Silicon Wafers.- Deep Level Centers in Au-Doped Polycrystalline Silicon.- Energy Calculation of the ?9{511} Twist Grain Boundary in Silicon.- Dependence of Grain Boundary Recombination Velocity on Density, Energy, and Capture Cross Section of Boundary Traps.- Influence of Some Physical and Chemical Parameters on the Recombining Activity of Dislocations in Silicon.- Effect of Surface Oxidation on Polycrystalline Silicon for Photovoltaic Application.- VI Gettering and Hydrogen Passivation in Silicon.- Gettering Processes in Polycrystalline Silicon.- Classical and Rapid Thermal-Process-Induced Gettering in Multicrystalline Silicon.- The Efficiency of Dislocations as Sinks for Silicon Self-Interstitials in Ribbon-Grown Polycrystalline Silicon.- Constrictions in the Split Dislocations as a Tool to Study Dislocation Gettering Activity in Silicon.- Gettering Phenomena and Dislocation Kink Mobility.- Effective Lifetime Improvement by Phosphorus and Chlorine Gettering in Polycrystalline EFG Silicon Ribbons.- Hydrogen-Passivation of Grain Boundaries in Polycrystalline Silicon.- A Simple H-Passivation Technique for High Performance Low Temperature Poly-Si TFTs.- VII Polycrystalline Material for Microelectronic Devices.- Polysilicon Layers in Modern Microelectronic Devices.- Electronic Properties and Novel Growth Techniques of Polysilicon Thin Films.- Development and Properties of Undoped Polycrystalline Thin Film Transistors.- Effect of Si Implantation Condition on the Performance of Polycrystalline Si Thin-Film Transistors.- Limited Reaction Processing of Silicon Layers for Thin Film Transistors and Polysilicon Emitter Bipolar Transistors.- Performance of Thin-Film Transistors Fabricated from Undoped Low Pressure Chemical Vapour Deposited Polycrystalline Silicon in Relation to the Growth Pressure.- Lateral Polysilicon n+p Diodes: Effect of the Grain Boundaries and of the p-Implanted Doping Level on the I—V and C—V Characteristics.- Effect of Doping Concentration and Active Layer Thickness on the Electrical Behaviour of Polysilicon Thin Film Transistors.- VIII Silicon Crystallization.- Laser Crystallization of Amorphous Silicon on Insulating Substrates.- XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFTs.- Suppression of Grain Boundary Formation During Laser Recrystallization of Thin Si-Films Using Micro Absorbers.- Silicon Liquid Phase Lateral Epitaxy by Pulsed Heating on an Insulating Structure with Seeding Windows.- IX Non-silicon Polycrystalline Materials.- Modelling of the Temperature Dependence of the Vacuum Electrical Resistance of Polycrystalline CdSe Films Between 360 and 620 K.- Hopping Conduction in Screen-Printed CdS:Cl.- An Isoelectronic Complex in Screen-Printed CdTe:Cl.- Optical Spectroscopy of Polycrystalline Materials: Theory and Experiments on Group IV Materials.- Material Characterization by Far-Infrared Magneto-Optical Absorption in Polycrystalline InP.- Semiconducting Properties of Ferrimagnetic Spinels Cu0.45Co0.55Cr2S4—xSex(0.0 ? x ? 1.5).- Optical and Electronic Properties of MoSe2 Thin Films Prepared by Soft Selenization.- Thermoelectric Application of Sintered Iron Disilicide.- Total Yield Photoemission Study of Heavily n- and p-Doped Glow Discharge Prepared Microcrystalline Silicon.- Synthesis of A1-Y Alloy Films for ULSI Metallization.- X New Solar Cell Materials.- Non-conventional Semiconductor Materials for Solar Cells.- Analysis of Growth Structures of Polycrystalline Chalcogenide Thin Films by X-Ray Diffraction.- Microstructure of Polycrystalline CuInSe2 in Solar Cell Material: Cross-Sectional Transmission Electron Microscopy Studies.- XPS Characterization of Co-evaporated CuInSe2 Thin Films.- Aggregate Structure and Adhesion Problems in CuIn(Ga)Se2 Films.- Microscopic Model for Electronic Effects of Surface Interaction Between Chalcogenide Semiconductors and Oxygen.- Preparation of Zinc Phosphide Films by Reactive Radio Frequency Sputtering.- XI Heterointerfaces: Structure.- Nucleation and Propagation of Misfit Dislocations in Strained Epitaxial Layer Systems.- Interfacial and Epilayer Defects in Semiconductor Heterostructures: The Case of GaAs/Si and GaSb/GaAs.- A Continuum Mechanics Approach to the Thermal Deformation of GaAs/Si Heterojunctions.- Electron Microscopical Investigations of Heteroepitaxial CdTe/GaAs.- Defect Processes During the Growth of Ge on Si by Liquid Phase Epitaxy.- XII Heterointerfaces: Devices.- Defect Related Issues in the Application of Si/Si1—x Gex Structures.- Chemical Ordering in Si1—x Gex Alloys and Si-Ge Strained-Layer Superlattices.- Polycrystalline Silicon Carbide Emitters for Heterojunction Bipolar Transistors.- The Effect of Interface Defects on the Optoelectronic Properties of n-VI Heterojunctions.- Deep Centers in AlGaAs Heteroepitaxial Diodes.- Index of Contributors.- Materials Index.
This volume discusses the structural, chemical, and electronic properties of grain boundaries, dislocations, and hetero-interfaces in polycrystalline semiconductors. Researchers and students in this field will find here much valuable information relevant to both fundamental research and technological applications.