1989, ISBN: 9783540508878
Hardcover
Springer, Gebundene Ausgabe, Auflage: 1, 405 Seiten, Publiziert: 1989-04-25T00:00:01Z, Produktgruppe: Buch, 1.77 kg, Maschinenbau, Ingenieurwissenschaften, Fachbücher, Kategorien, Bücher,… More...
amazon.de fachbuecher-weltversand Gut Shipping costs:Auf Lager. Die angegebenen Versandkosten können von den tatsächlichen Kosten abweichen. (EUR 3.00) Details... |
1989, ISBN: 9783540508878
Editor: Möller, Hans J. Editor: Strunk, Horst P. Editor: Werner, Juergen, Springer, Hardcover, 394 Seiten, Publiziert: 1989-04-25T00:00:01Z, Produktgruppe: Book, 0.8 kg, Physical Chemistr… More...
amazon.co.uk fachbuecher-weltversand Gut Shipping costs:In stock. Die angegebenen Versandkosten können von den tatsächlichen Kosten abweichen. (EUR 5.56) Details... |
Polycrystalline Semiconductors: Grain Boundaries and Interfaces: Grain Boundaries and Interfaces Proceedings of the International Symposium, Malente, . (Springer Proceedings in Physics, Band 35) - hardcover
1989, ISBN: 3540508872
[EAN: 9783540508878], Gebraucht, sehr guter Zustand, [SC: 3.0], [PU: Springer 25.04.1989.], BUCH, 394 Seiten Exemplar aus einer wissenchaftlichen Bibliothek Sprache: Englisch Gewicht in G… More...
ZVAB.com NEPO UG, Rüsselsheim am Main, Germany [51070922] [Rating: 5 (von 5)] NOT NEW BOOK. Shipping costs: EUR 3.00 Details... |
Polycrystalline Semiconductors: Grain Boundaries and Interfaces: Grain Boundaries and Interfaces Proceedings of the International Symposium, Malente, . (Springer Proceedings in Physics, Band 35) - hardcover
1989, ISBN: 3540508872
[EAN: 9783540508878], Gebraucht, sehr guter Zustand, [SC: 3.0], [PU: Springer 25.04.1989.], BUCH, 394 Seiten Exemplar aus einer wissenchaftlichen Bibliothek Sprache: Englisch Gewicht in G… More...
ZVAB.com NEPO UG, Rüsselsheim am Main, Germany [51070922] [Rating: 4 (von 5)] NOT NEW BOOK. Shipping costs: EUR 3.00 Details... |
Polycrystalline Semiconductors: Grain Boundaries and Interfaces: Grain Boundaries and Interfaces Proceedings of the International Symposium, Malente, ... (Springer Proceedings in Physics, Band 35) - hardcover
2025, ISBN: 3540508872
0,0 x 0,0 x 0,0 cm, Gebundene Ausgabe 394 Seiten Gebundene Ausgabe Exemplar aus einer wissenchaftlichen Bibliothek, [KW:BUCH] 3, [PU:Springer,]
Achtung-Buecher.de Mosakowski GbR Halim Koulali und Lubosz Mosakowski, 65428 Rüsselsheim am Main Shipping costs:Versandkostenfrei innerhalb der BRD. (EUR 0.00) Details... |
Polycrystalline Semiconductors: Grain Boundaries and Interfaces (Springer Proceedings in Physics, 35, Band 35) - First edition
1989, ISBN: 9783540508878
Hardcover
Springer, Gebundene Ausgabe, Auflage: 1, 405 Seiten, Publiziert: 1989-04-25T00:00:01Z, Produktgruppe: Buch, 1.77 kg, Maschinenbau, Ingenieurwissenschaften, Fachbücher, Kategorien, Bücher,… More...
1989, ISBN: 9783540508878
Editor: Möller, Hans J. Editor: Strunk, Horst P. Editor: Werner, Juergen, Springer, Hardcover, 394 Seiten, Publiziert: 1989-04-25T00:00:01Z, Produktgruppe: Book, 0.8 kg, Physical Chemistr… More...
Polycrystalline Semiconductors: Grain Boundaries and Interfaces: Grain Boundaries and Interfaces Proceedings of the International Symposium, Malente, . (Springer Proceedings in Physics, Band 35) - hardcover
1989
ISBN: 3540508872
[EAN: 9783540508878], Gebraucht, sehr guter Zustand, [SC: 3.0], [PU: Springer 25.04.1989.], BUCH, 394 Seiten Exemplar aus einer wissenchaftlichen Bibliothek Sprache: Englisch Gewicht in G… More...
Polycrystalline Semiconductors: Grain Boundaries and Interfaces: Grain Boundaries and Interfaces Proceedings of the International Symposium, Malente, . (Springer Proceedings in Physics, Band 35) - hardcover
1989, ISBN: 3540508872
[EAN: 9783540508878], Gebraucht, sehr guter Zustand, [SC: 3.0], [PU: Springer 25.04.1989.], BUCH, 394 Seiten Exemplar aus einer wissenchaftlichen Bibliothek Sprache: Englisch Gewicht in G… More...
Polycrystalline Semiconductors: Grain Boundaries and Interfaces: Grain Boundaries and Interfaces Proceedings of the International Symposium, Malente, ... (Springer Proceedings in Physics, Band 35) - hardcover
2025, ISBN: 3540508872
0,0 x 0,0 x 0,0 cm, Gebundene Ausgabe 394 Seiten Gebundene Ausgabe Exemplar aus einer wissenchaftlichen Bibliothek, [KW:BUCH] 3, [PU:Springer,]
Bibliographic data of the best matching book
Author: | |
Title: | |
ISBN: |
Details of the book - Polycrystalline Semiconductors: Grain Boundaries and Interfaces: 35 (Springer Proceedings in Physics)
EAN (ISBN-13): 9783540508878
ISBN (ISBN-10): 3540508872
Hardcover
Paperback
Publishing year: 1988
Publisher: Springer
Book in our database since 2007-07-07T07:12:23+01:00 (London)
Detail page last modified on 2024-01-21T17:07:21+00:00 (London)
ISBN/EAN: 3540508872
ISBN - alternate spelling:
3-540-50887-2, 978-3-540-50887-8
Alternate spelling and related search-keywords:
Book author: strunk, werner, möller horst, mller, jürgen möller, jurgen moller, hans moeller
Book title: interfaces, grain, polycrystalline semiconductors, interface, semiconductor physics, proceedings, the symposium, springer physics
Information from Publisher
Author: Hans J. Möller; Horst P. Strunk; Jürgen H. Werner
Title: Springer Proceedings in Physics; Polycrystalline Semiconductors - Grain Boundaries and Interfaces
Publisher: Springer; Springer Berlin
394 Pages
Publishing year: 1989-04-25
Berlin; Heidelberg; DE
Printed / Made in
Weight: 0,805 kg
Language: English
85,55 € (DE)
87,95 € (AT)
106,60 CHF (CH)
Not available, publisher indicates OP
BB; Book; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; integrated circuit; solar cell; silicon; chemistry; Sensor; electron microscopy; film; laser; development; spectroscopy; surface; semiconductor; thin films; transistor; transport; C; Electronics and Microelectronics, Instrumentation; Physics and Astronomy; Physical Chemistry; Surfaces and Interfaces, Thin Films; Physikalische Chemie; Materialwissenschaft; Oberflächenchemie und Adsorption; BC; EA
I Grain Boundary Structure.- Intergranular Total Energy Maps and the Structure of a Grain Boundary.- Grain Boundary Structure Determination by HREM: A Comparison with Computer Relaxed Configurations for Pure Tilt in Germanium.- Multiple Structures of a [001] ? = 13 Tilt Grain Boundary in Germanium.- Computer Modelling of Grain Boundaries by Use of Interatomic Potentials.- Transmission of Dislocations with Non-common Burgers Vectors Through ? = 9 (12?2) Boundaries in Silicon and Germanium Observed by In Situ HVEM.- II Grain Boundary Chemistry and Electronic Properties.- High Resolution Electron Microscopy of the Structure and Chemistry of Grain Boundaries and Other Interfaces in Semiconductors.- Theoretical Studies of the Impurity Segregation and Electrical Properties of Polycrystalline Silicon by LCAO Electronic Theory.- Electronic Properties of ? = 25 Silicon Bicrystals by Deep Level Transient Spectroscopy.- The Influence of Structure and Impurity Precipitation on the Electrical Properties of the Grain Boundaries in Silicon: Copper Precipitation in the ? = 25 Boundary.- EBIC Contrast and Precipitation in ? = 13 and ? = 25 Annealed Silicon Bicrystals.- Electron Beam Induced Current Contrast and Transmission Electron Microscopy Analysis of Special Grain Boundaries in Silicon.- SEM-EBIC Investigations of the Electrical Activity of Grain Boundaries in Germanium.- III Segregation, Activation and Passivation.- Atomic-Level Imaging and Microanalysis of Grain Boundaries in Polycrystalline Semiconductors.- Investigation of the Cobalt Segregation at Grain Boundaries in Silicon.- On the Influence of the Cottrell Atmosphere on the Recombination Losses at Grain Boundaries in Polycrystalline Silicon.- Hydrogen Passivation of Grain Boundaries in Silicon Sheet Material.- Atomic Hydrogen Passivation Studies of Microcrystalline Phases in Ion-Implant Damaged Surface Layers of Silicon.- Hydrogen Injection and Migration in Silicon.- Analysis of the Polycrystalline Semiconducting Film Electrical Resistance Variation Due to Isothermal Desorption and Temperature Stimulated Desorption of Oxygen.- IV Segregation, Activation and Passivation.- Activation and Passivation of Grain Boundary Recombination Activity in Polycrystalline Silicon.- Thermal Activation and Hydrogen Passivation of Grain Boundaries.- Analysis of Metal-Doped Polycrystalline Silicon with Secondary Ion Mass Spectrometry.- Oxygen Detection in Polycrystalline Silicon.- Generation of Radiation Defects in the Vicinity of Twin Boundaries in EFG Silicon Ribbons.- Physical Properties of Polycrystalline S-Web Si Ribbons.- Grain Boundary Structure in S-WEB Silicon Ribbon.- Characterization of MBE-Grown Polysilicon.- V Technology.- Mechanisms of Epitaxial Growth of Polar Semiconductors on (001) Silicon.- Preparation and Characterization of Nickel Silicide.- Characterization of the Interface of Silicon pn-Junctions, Fabricated by the Silicon Direct Bonding (SDB) Method.- Metal and Polycrystalline Silicon Reactions.- Interfacial Reactions of TiNx/Si Contacts.- Linear and Parabolic Growth Kinetics in Binary Couples.- VI Thin Films.- Polycrystalline Compound Semiconductor Thin Films in Solar Cells.- Electronic Properties of Photoetched CdSe Films.- Thin Film Transistors and Light Sensors with Polycrystalline CdSe-Semiconductors.- VII Crystallization.- Crystallization Processes and Structures of Semiconductor Films.- Crystallized Silicon Films for Active Devices.- Laser Recrystallization of Polysilicon for Improved Device Quality.- Growth of Sb-Doped Epitaxial Si Layers Through Recrystallization of Poly-Si on a (100) Si Substrate.- VIII Transport Properties.- Current Control by Electrically Active Grain Boundaries.- Numerical Modelling of the Intergranular Potential Barrier Height and Carrier Concentration in Polysilicon.- Hall Mobility and Carrier Concentration of e-Gun Evaporated Poly-Si Films.- Measurement and Calculation of the Carrier Concentration in Polycrystalline Germanium Thin Films.- Grain Boundary States in Float-Zone Silicon Bicrystals.- Pressure Studies of Metastable Electron Traps in Grain Boundaries of p-HgMnTe and p-HgCdMnTe.- Band Tailing in Polycrystalline and Disordered Silicon.- IX Thin Films.- Microstructure and Interfaces of Polysilicon in Integrated Circuits.- Effect of the Grain Boundaries in Small Grain Polysilicon Thin Film Transistors.- Kink Effect in the Double-Gate Accumulation-Mode N-Channel Polysilicon Thin-Film Transistors.- Applications of Poly-Si in Selective-Area and Three-Dimensional Devices.- Thin-Film Transistors from Evaporated Low Temperature Processed Poly-Si Films.- Pressure Effect on In Situ Boron-Doped LPCVD Silicon Films.- Index of Contributors.More/other books that might be very similar to this book
Latest similar book:
9781489989109 Plasticity in the Visual System: From Genes to Circuits (Raphael Pinaud; Liisa A. Tremere; Peter de Weerd)
- 9781489989109 Plasticity in the Visual System: From Genes to Circuits (Raphael Pinaud; Liisa A. Tremere; Peter de Weerd)
- 9780387508870 Plasticity in the Visual System (Springer Proceedings in Physics) (Raphael Pinaud, Liisa A. Tremere, Peter Weerd)
- 9780387281902 Plasticity in the Visual System (Raphael Pinaud; Liisa A. Tremere; Peter de Weerd)
- 9780387281896 Plasticity In The Visual System by Raphael Pinaud Hardcover | Indigo Chapters (Raphael Pinaud; Liisa A. Tremere; Peter de Weerd)
< to archive...