ISBN: 9780470012901

This volume is the first in a series of three books addressingElectrostatic Discharge (ESD) physics, devices, circuits and designacross the full range of integrated circuit technologies. … More...

This volume is the first in a series of three books addressingElectrostatic Discharge (ESD) physics, devices, circuits and designacross the full range of integrated circuit technologies. ESDPhysics and Devices provides a concise treatment of the ESDphenomenon and the physics of devices operating under ESDconditions. Voldman presents an accessible introduction to thefield for engineers and researchers requiring a solid grounding inthis important area. The book contains advanced CMOS, Silicon OnInsulator, Silicon Germanium, and Silicon Germanium Carbon. Inaddition it also addresses ESD in advanced CMOS with discussions onshallow trench isolation (STI), Copper and Low K materials. * Provides a clear understanding of ESD device physics and thefundamentals of ESD phenomena. * Analyses the behaviour of semiconductor devices under ESDconditions. * Addresses the growing awareness of the problems resulting fromESD phenomena in advanced integrated circuits. * Covers ESD testing, failure criteria and scaling theory forCMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (SiliconGermanium) technologies for the first time. * Discusses the design and development implications of ESD insemiconductor technologies. An invaluable reference for EMC non-specialist engineers andresearchers working in the fields of IC and transistor design.Also, suitable for researchers and advanced students in the fieldsof device/circuit modelling and semiconductor reliability. eBooks > Fremdsprachige eBooks > Englische eBooks > Sach- & Fachthemen > Technik; eBooks > Fachbücher > Ingenieurwissenschaften , John Wiley & Sons Inc, Steven H. Voldman, John Wiley & Sons Inc, H.<

ISBN: 9780470012901

This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies… More...

This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials. Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena.Analyses the behaviour of semiconductor devices under ESD conditions.Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits.Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time.Discusses the design and development implications of ESD in semiconductor technologies.An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.; PDF; Scientific, Technical and Medical > Physics > Electricity, electromagnetism & magnetism, Wiley<

ISBN: 9780470012901

This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies… More...

This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials. Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena.Analyses the behaviour of semiconductor devices under ESD conditions.Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits.Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time.Discusses the design and development implications of ESD in semiconductor technologies.An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.; PDF; Scientific, Technical and Medical > Physics > Electricity, electromagnetism & magnetism, Wiley<

ISBN: 9780470012901

This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies… More...

This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials. Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena.Analyses the behaviour of semiconductor devices under ESD conditions.Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits.Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time.Discusses the design and development implications of ESD in semiconductor technologies.An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.; PDF; Scientific, Technical and Medical > Physics > Electricity, electromagnetism & magnetism, Wiley<

2005, ISBN: 9780470012901

Physics and Devices, eBooks, eBook Download (PDF), Auflage, [PU: Wiley], [ED: 1], Wiley, 2005