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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - Zhiqiang Li
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Zhiqiang Li:

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - hardcover

2016, ISBN: 366249681X

[EAN: 9783662496817], Neubuch, [SC: 0.0], [PU: Springer Berlin Heidelberg], CHEMIE; FESTKÖRPERPHYSIK; ELEKTRONIK / HALBLEITER; LEITUNG (PHYSIKALISCH) MASSENSPEKTROMETRIE - SPEKTROMETRIE; … More...

NEW BOOK. Shipping costs:Versandkostenfrei. (EUR 0.00) AHA-BUCH GmbH, Einbeck, Germany [51283250] [Rating: 5 (von 5)]
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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - Zhiqiang Li
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Zhiqiang Li:

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - new book

2022, ISBN: 9783662496817

[ED: Buch], [PU: Springer Berlin Heidelberg], Neuware - This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With  adopting of the … More...

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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - Li, Zhiqiang
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Li, Zhiqiang:
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - hardcover

2016

ISBN: 9783662496817

[ED: Hardcover], [PU: Springer / Springer Berlin Heidelberg / Springer, Berlin], This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFE… More...

Shipping costs:Versandkostenfrei, Versand nach Deutschland. (EUR 0.00) buecher.de GmbH & Co. KG
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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices Zhiqiang Li Author
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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices Zhiqiang Li Author - new book

ISBN: 9783662496817

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co… More...

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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - Zhiqiang Li
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Zhiqiang Li:
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - hardcover

2016, ISBN: 366249681X

[EAN: 9783662496817], Neubuch, [SC: 0.0], [PU: Springer Berlin Heidelberg], CHEMIE FESTKÖRPERPHYSIK ELEKTRONIK HALBLEITER LEITUNG (PHYSIKALISCH) MASSENSPEKTROMETRIE - SPEKTROMETRIE NANOTE… More...

NEW BOOK. Shipping costs:Versandkostenfrei. (EUR 0.00) moluna, Greven, Germany [73551232] [Rating: 4 (von 5)]

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Details of the book - The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices Zhiqiang Li Author


EAN (ISBN-13): 9783662496817
ISBN (ISBN-10): 366249681X
Hardcover
Publishing year: 1
Publisher: Springer Berlin Heidelberg Core >2

Book in our database since 2016-03-08T19:29:30+00:00 (London)
Detail page last modified on 2024-02-27T14:13:41+00:00 (London)
ISBN/EAN: 9783662496817

ISBN - alternate spelling:
3-662-49681-X, 978-3-662-49681-7
Alternate spelling and related search-keywords:
Book author: schottky
Book title: the source, mos, germanium, springer theses


Information from Publisher

Author: Zhiqiang Li
Title: Springer Theses; The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Publisher: Springer; Springer Berlin
59 Pages
Publishing year: 2016-06-22
Berlin; Heidelberg; DE
Printed / Made in
Weight: 0,454 kg
Language: English
53,49 € (DE)
54,99 € (AT)
59,00 CHF (CH)
POD
XIV, 59 p. 52 illus., 49 illus. in color.

BB; Semiconductors; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronische Geräte und Materialien; Verstehen; Elektrotechnik, Elektronik; Contact resistance; Thermal stability; Germanium-based MOSFET; Dopant segregation; Source and drain; Nickel germanide; Dopant activation; MOS device; Electronic Circuits and Devices; Nanoscale Science and Technology; Solid State Physics; Semiconductors; Electronic Circuits and Systems; Nanophysics; Condensed Matter Physics; Schaltkreise und Komponenten (Bauteile); Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Nanowissenschaften; EA; BC

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced  source/drain parasitic resistance is demonstrated in the  fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

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