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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Timm Höhr
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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Paperback

ISBN: 3866280874

[SR: 3286698], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this w… More...

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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Timm Höhr
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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Paperback

ISBN: 3866280874

[SR: 3630700], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this w… More...

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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Timm Höhr
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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Paperback

ISBN: 3866280874

[SR: 4092895], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this w… More...

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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - Timm Höhr
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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - Paperback

ISBN: 3866280874

Paperback, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, 1025612, Subjects, 349777011, Antiquarian, Rare & Collectable, 91, Art, Architectu… More...

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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - Timm Höhr
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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - Paperback

ISBN: 3866280874

Paperback, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, 1025612, Subjects, 349777011, Antiquarian, Rare & Collectable, 91, Art, Architectu… More...

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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics)
Author:
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ISBN:

3866280874


Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility.

Details of the book - Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics)


ISBN (ISBN-10): 3866280874 (ISBN-13: 9783866280878)
Paperback
Publisher: Hartung-Gorre

Book in our database since 2008-09-12T23:14:04+01:00 (London)
Detail page last modified on 2018-01-17T14:14:57+00:00 (London)
ISBN/EAN: 3866280874

ISBN - alternate spelling:
3-86628-087-4
Alternate spelling and related search-keywords:
Book author: timm

Information from Publisher

Author: Timm Höhr
Title: Series in Microelectronics; Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices
Publisher: Hartung-Gorre
134 Pages
Publishing year: 2006-10-10
Language: English
64,00 € (DE)
65,80 € (AT)
125,20 CHF (CH)
Not available (reason unspecified)

BC; KART; Hardcover, Softcover / Informatik, EDV/Hardware; Computerhardware; Ingenieurwissenschaften; semiconductor device modeling; Shockley-Read-Hall recombination; quantum transport; tunneling effect

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